Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool which performs e-beam writing simulation, resist development simulation and automated metrology has been developed and applied in the case of Mo/Si multilayer substrates. Simulation results are compared with experimental ones in order to evaluate the simulation's accuracy.

High resolution patterning and simulation on Mo/Si multilayer for EUV masks

Gerardino A
2008

Abstract

Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool which performs e-beam writing simulation, resist development simulation and automated metrology has been developed and applied in the case of Mo/Si multilayer substrates. Simulation results are compared with experimental ones in order to evaluate the simulation's accuracy.
2008
978-0-8194-6956-4
simulation
e-beam
EUV mask
direct writing
metrology algorithm
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/406298
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