The microstructural and morphological properties of homoepitaxial (001)ZnTe layers grown by metalorganic vapor phase epitaxy at a temperature (T-G) between 325 degrees C and 400 degrees C are investigated by x-ray diffuse scattering. High resolution reciprocal space maps (RSMs) recorded close to the ZnTe (004) Bragg peak show different diffuse scattering features that can be ascribed to (i) the specific surface morphology of the sample, and (ii) the presence of extended lattice defects in the epilayers. One kind of cross-shaped diffuse scattering streaks, appearing for T-G>= 350 degrees C, extend along < 111 > directions and can be attributed to stacking faults (SFs) occurring at the epilayer-substrate interface, within the epilayers. The SF diameter was estimated around 200-300 nm, while their density increases with T-G. Another kind of cross-shaped diffuse streaks, inclined at an angle beta approximate to 80 degrees with respect to the < 110 > in-plane direction, arises from the morphology of epilayers grown above 360 degrees C, their surfaces being covered by pairs of pyramidal hillocks up to a density of 10(6)-10(7) cm(-2). Atomic force microscopy (AFM) measurements showed that the apex angles of the pyramids compare well with the value of 2 beta. The hillock formation is ascribed to Te adatoms experiencing a Schwoebel potential barrier at the step edges around pairs of partial dislocations (dipoles) bounding the SFs. In a quite narrow growth temperature interval around 350 degrees C no beta-crossed diffuse streaks are instead observed in the RSMs, indicating a smooth ZnTe surface. Finally, at a lower growth temperature (T-G=325 degrees C) a diffuse scattering intensity distribution defined by an angle gamma approximate to 63 degrees with respect to the < 110 > in-plane direction is observed, corresponding to a dense ridging of the epilayer surface along the perpendicular direction. Both RSM analysis and AFM measurements indicate that the ridge sidewalls are {113} planes.
Microstructural and morphological properties of homoepitaxial (001)ZnTe layers investigated by x-ray diffuse scattering
Prete P;
2005
Abstract
The microstructural and morphological properties of homoepitaxial (001)ZnTe layers grown by metalorganic vapor phase epitaxy at a temperature (T-G) between 325 degrees C and 400 degrees C are investigated by x-ray diffuse scattering. High resolution reciprocal space maps (RSMs) recorded close to the ZnTe (004) Bragg peak show different diffuse scattering features that can be ascribed to (i) the specific surface morphology of the sample, and (ii) the presence of extended lattice defects in the epilayers. One kind of cross-shaped diffuse scattering streaks, appearing for T-G>= 350 degrees C, extend along < 111 > directions and can be attributed to stacking faults (SFs) occurring at the epilayer-substrate interface, within the epilayers. The SF diameter was estimated around 200-300 nm, while their density increases with T-G. Another kind of cross-shaped diffuse streaks, inclined at an angle beta approximate to 80 degrees with respect to the < 110 > in-plane direction, arises from the morphology of epilayers grown above 360 degrees C, their surfaces being covered by pairs of pyramidal hillocks up to a density of 10(6)-10(7) cm(-2). Atomic force microscopy (AFM) measurements showed that the apex angles of the pyramids compare well with the value of 2 beta. The hillock formation is ascribed to Te adatoms experiencing a Schwoebel potential barrier at the step edges around pairs of partial dislocations (dipoles) bounding the SFs. In a quite narrow growth temperature interval around 350 degrees C no beta-crossed diffuse streaks are instead observed in the RSMs, indicating a smooth ZnTe surface. Finally, at a lower growth temperature (T-G=325 degrees C) a diffuse scattering intensity distribution defined by an angle gamma approximate to 63 degrees with respect to the < 110 > in-plane direction is observed, corresponding to a dense ridging of the epilayer surface along the perpendicular direction. Both RSM analysis and AFM measurements indicate that the ridge sidewalls are {113} planes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
