Topological surface states usually emerge at the boundary between a topological and a conventional insulator. Their precise physical character and spatial localization depend on the complex interplay between the chemical, structural and electronic properties of the two insulators in contact. Using a lattice-matched heterointerface of single and double bilayers of ?-antimonene and bismuth selenide, we perform a comprehensive experimental and theoretical study of the chiral surface states by means of microscopy and spectroscopic measurements complemented by first-principles calculations. We demonstrate that, although ?-antimonene is a trivial insulator in its free-standing form, it inherits the unique symmetry-protected spin texture from the substrate via a proximity effect that induces outward migration of the topological state. This "topologization" of ?-antimonene is found to be driven by the hybridization of the bands from either side of the interface.

Topologization of beta-antimonene on Bi2Se3 via proximity effects

Mahatha SK;Sheverdyaeva PM;Moras P;Flammini R;Colonna S;Ronci F;Barla A;Hogan C;Carbone C
2020

Abstract

Topological surface states usually emerge at the boundary between a topological and a conventional insulator. Their precise physical character and spatial localization depend on the complex interplay between the chemical, structural and electronic properties of the two insulators in contact. Using a lattice-matched heterointerface of single and double bilayers of ?-antimonene and bismuth selenide, we perform a comprehensive experimental and theoretical study of the chiral surface states by means of microscopy and spectroscopic measurements complemented by first-principles calculations. We demonstrate that, although ?-antimonene is a trivial insulator in its free-standing form, it inherits the unique symmetry-protected spin texture from the substrate via a proximity effect that induces outward migration of the topological state. This "topologization" of ?-antimonene is found to be driven by the hybridization of the bands from either side of the interface.
2020
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Istituto di Struttura della Materia - ISM - Sede Secondaria Trieste
topological insulator
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/409064
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