We present a combined cross-section Scanning Tunnelling Microscopy-Spectroscopy (X-STM/STS) and ab initio simulations study of the non-polar (11-20) cleaved surface of 6H-SiC. The experimental results show an unreconstructed surface in agreement with theory. Upon truncation, two surface bands appear inside the semiconductor bandgap: one empty band localized on the Si-atoms and one filled band on the C-atoms. According to the STS experimental results on n-doped samples, the Fermi energy is pinned at the surface inside the bandgap. By comparison of STM filled and empty states topographies we propose that on the fresh cleaved surface the Fermi level lies at the bottom of the Si-like band. The calculated STM images reproduce very well the experimental contrast of the 6H stacking sequence and its bias dependence.
Atomic and electronic structure of the cleaved 6H-SiC(11-20) surface
Catellani A
2007
Abstract
We present a combined cross-section Scanning Tunnelling Microscopy-Spectroscopy (X-STM/STS) and ab initio simulations study of the non-polar (11-20) cleaved surface of 6H-SiC. The experimental results show an unreconstructed surface in agreement with theory. Upon truncation, two surface bands appear inside the semiconductor bandgap: one empty band localized on the Si-atoms and one filled band on the C-atoms. According to the STS experimental results on n-doped samples, the Fermi energy is pinned at the surface inside the bandgap. By comparison of STM filled and empty states topographies we propose that on the fresh cleaved surface the Fermi level lies at the bottom of the Si-like band. The calculated STM images reproduce very well the experimental contrast of the 6H stacking sequence and its bias dependence.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
