Electrical properties of CdTe single crystals doped by Sb were studied in situ at high temperature point defect equilibrium under well defined Cd and Te vapour pressure. Up to similar to 700-800 K samples revealed p-type conductivity both under Cd and Te saturation. The position of the deep acceptor level E-alpha = E-v + 0.28 eV was determined using hole density temperature dependency at 350-650 K. The point defects responsible for hole density are supposed to be Sb-Te acceptors. The n-type conductivity above similar to 700-800 K is determined by intrinsic point defects: electrons under Te saturation due to native disorder and Cd interstitials under Cd saturation.
High temperature properties of CdTe crystals doped by Sb
Armani N;
2007
Abstract
Electrical properties of CdTe single crystals doped by Sb were studied in situ at high temperature point defect equilibrium under well defined Cd and Te vapour pressure. Up to similar to 700-800 K samples revealed p-type conductivity both under Cd and Te saturation. The position of the deep acceptor level E-alpha = E-v + 0.28 eV was determined using hole density temperature dependency at 350-650 K. The point defects responsible for hole density are supposed to be Sb-Te acceptors. The n-type conductivity above similar to 700-800 K is determined by intrinsic point defects: electrons under Te saturation due to native disorder and Cd interstitials under Cd saturation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
