DC-Pulsed Magnetron Sputtering (PMS) allows to produce heteroepitaxial p-type Germanium thin films on 6” Silicon wafers. Integrated p-n photodiodes, based on DC-PMS deposited Ge/Si heterojunctions, feature flat responsivity over the whole third communication window.

Sputtered Ge-Si heteroepitaxial thin films for photodetection in third window

Pietralunga S M;Zappettini A;
2008

Abstract

DC-Pulsed Magnetron Sputtering (PMS) allows to produce heteroepitaxial p-type Germanium thin films on 6” Silicon wafers. Integrated p-n photodiodes, based on DC-PMS deposited Ge/Si heterojunctions, feature flat responsivity over the whole third communication window.
2008
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
DC-Pulsed Magnetron Sputtering (PMS)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/41038
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