Due to its wide bandgap, high thermal conductivity, high electrical resistivity, temperature independent piezoelectric coefficient, aluminum nitride (AlN) represents a material of great technological interest, for applications in RF MEMS devices, high power electronics, energy harvesting and optoelectronics [1]. In the specific case of piezoelectric applications, the performances of the device strongly depend on the AlN microstructural properties, because AlN thin films grown along c-axis orientation exhibit intense piezoelectric response, the (001) orientation having the highest piezoelectric constants [2].
Structural Switch of AlN Sputtered Thin Films From (101) to (002) Orientation, Driven by the Growth Kinetics
MA Signore;M Catalano;
2017
Abstract
Due to its wide bandgap, high thermal conductivity, high electrical resistivity, temperature independent piezoelectric coefficient, aluminum nitride (AlN) represents a material of great technological interest, for applications in RF MEMS devices, high power electronics, energy harvesting and optoelectronics [1]. In the specific case of piezoelectric applications, the performances of the device strongly depend on the AlN microstructural properties, because AlN thin films grown along c-axis orientation exhibit intense piezoelectric response, the (001) orientation having the highest piezoelectric constants [2].File in questo prodotto:
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