We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 μm thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements.
Growth of vertical InAs nanowires on heterostructured substrates
Roddaro S;Biasiol G;Rossi F;Bocchi C;Sorba L
2009
Abstract
We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 μm thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
