III-V semiconductor alloys, such as a ternary GaInP and a quaternary GaInAsP alloys, are important materials widely used in semiconductor lasers, solar cells, high electron mobility transistor (HEMT) and heterojunction bipolar transistors (HBT). It is well known that within III-V semiconductor epitaxial layers grown by Metalorganic Vapour Phase Epitaxy (MOVPE) technique a periodic composition fluctuation coexists with spontaneously-formed atomically-ordered clusters.
Relation between photoluminescence properties and cristalline structure of III-V semiconductor alloys grown by MOVPE
Attolini Giovanni
2016
Abstract
III-V semiconductor alloys, such as a ternary GaInP and a quaternary GaInAsP alloys, are important materials widely used in semiconductor lasers, solar cells, high electron mobility transistor (HEMT) and heterojunction bipolar transistors (HBT). It is well known that within III-V semiconductor epitaxial layers grown by Metalorganic Vapour Phase Epitaxy (MOVPE) technique a periodic composition fluctuation coexists with spontaneously-formed atomically-ordered clusters.File in questo prodotto:
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