We simulate a tunnel-junction VCSEL within a Poisson-drift-diffusion framework, quantum-corrected by the solution of the Schrödinger equation in the active region and coupled with an optical and thermal simulation. We then proceed to compare the results with an established quantum-corrected model based on capture times.
Simulations of 850 nm tunnel-junction VCSELs with different quantum-corrected models for the active region
A Gullino;P Debernardi
2022
Abstract
We simulate a tunnel-junction VCSEL within a Poisson-drift-diffusion framework, quantum-corrected by the solution of the Schrödinger equation in the active region and coupled with an optical and thermal simulation. We then proceed to compare the results with an established quantum-corrected model based on capture times.File in questo prodotto:
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