This paper presents a theoretical comparison of the electro-optical characteristics of 850nm GaAs/AlGaAs pin-and BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80°C, enabled by TJ confinement scheme.
A multiscale approach for BTJ-VCSEL electro-optical analysis
Gullino A;Debernardi P
2021
Abstract
This paper presents a theoretical comparison of the electro-optical characteristics of 850nm GaAs/AlGaAs pin-and BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80°C, enabled by TJ confinement scheme.File in questo prodotto:
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