By radiofrequency magnetron sputtering co-deposition we synthesized Er:SiO film 0.5 ?m thick on silica substrates, with Er content < 0.3 atomic %. By changing the preparation condition (during deposition we have used an additional negative bias voltage applied to the substrates for inducing a low-energy ion bombardment, with or without a contemporary heating) and by varying the thermal treatment after the synthesis (the best conditions were 1 h in the range 700-800 °C, in air) we have obtained an Er:SiO system with an intense photoluminescence emission at ? = 1.54 ?m. The best-performing Er:SiO samples obtained by sputtering have shown a photoluminescence response comparable to that of the typical Er:SiO thin film systems obtained by conventional techniques used in applicative framework. © 2011 Elsevier B.V. All rights reserved.
Photoluminescence optimization of Er-doped SiO2 films synthesized by radiofrequency magnetron sputtering with energetic treatments during and after deposition
Visentin F
2011
Abstract
By radiofrequency magnetron sputtering co-deposition we synthesized Er:SiO film 0.5 ?m thick on silica substrates, with Er content < 0.3 atomic %. By changing the preparation condition (during deposition we have used an additional negative bias voltage applied to the substrates for inducing a low-energy ion bombardment, with or without a contemporary heating) and by varying the thermal treatment after the synthesis (the best conditions were 1 h in the range 700-800 °C, in air) we have obtained an Er:SiO system with an intense photoluminescence emission at ? = 1.54 ?m. The best-performing Er:SiO samples obtained by sputtering have shown a photoluminescence response comparable to that of the typical Er:SiO thin film systems obtained by conventional techniques used in applicative framework. © 2011 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
