With black phosphorus being a promising two-dimensional layered semiconductor for application to electronics and optoelectronics, an issue remains as to how heat diffusion is managed when black phosphorus is interfaced with metals, namely in a typical device heterojunction. We use Raman spectroscopy to investigate how the laser-induced heat affects the phonon modes at the interface by comparing the experimental data with a finite element simulation based on a localized heat diffusion. The best convergence is found taking into account an effective interface thermal conductance, thus indicating that heat dissipation at the Au-supported black phosphorus nanosheets is limited by interface effect.

Optothermal Raman Spectroscopy of Black Phosphorus on a Gold Substrate

Molle Alessandro
2022

Abstract

With black phosphorus being a promising two-dimensional layered semiconductor for application to electronics and optoelectronics, an issue remains as to how heat diffusion is managed when black phosphorus is interfaced with metals, namely in a typical device heterojunction. We use Raman spectroscopy to investigate how the laser-induced heat affects the phonon modes at the interface by comparing the experimental data with a finite element simulation based on a localized heat diffusion. The best convergence is found taking into account an effective interface thermal conductance, thus indicating that heat dissipation at the Au-supported black phosphorus nanosheets is limited by interface effect.
2022
Istituto per la Microelettronica e Microsistemi - IMM
black phosphorus
finite-element method
interface thermal resistance
optothermal raman spectroscopy
phosphorene
Xenes
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Descrizione: Optothermal Raman Spectroscopy of Black Phosphorus on a Gold Substrate
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/415762
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