In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed.
Room-temperature single-electron effects in silicon nanocrystal memories
Lombardo S;
2005
Abstract
In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed.File in questo prodotto:
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