The I-V characteristics of ultra-thin gate oxides under progressive breakdown (BD) show a common behavior, indicative of well-defined general physical features of the BD spot. Transmission electron microscopy (TEM) observations give some hints about this structure and on this basis we propose a physical model of the post-BD current, which is in good agreement with data.
Structure of the oxide damage under progressive breakdown
Lombardo S;
2005
Abstract
The I-V characteristics of ultra-thin gate oxides under progressive breakdown (BD) show a common behavior, indicative of well-defined general physical features of the BD spot. Transmission electron microscopy (TEM) observations give some hints about this structure and on this basis we propose a physical model of the post-BD current, which is in good agreement with data.File in questo prodotto:
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