Surface reflection topographs of heteroepitaxial ZnSe films on GaAs substrates were obtained using grazing incident synchrotron X-ray radiation. The topographs indicated that diffraction occurred only in the ZnSe epilayer because no misfit dislocations within the interface were visible. Furthermore, the lattice perfection of the ZnSe epilayer was lower than that of the GaAs substrate, although strain relaxation arose due to the nucleation of misfit dislocations.
Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates
Prete P;
2004
Abstract
Surface reflection topographs of heteroepitaxial ZnSe films on GaAs substrates were obtained using grazing incident synchrotron X-ray radiation. The topographs indicated that diffraction occurred only in the ZnSe epilayer because no misfit dislocations within the interface were visible. Furthermore, the lattice perfection of the ZnSe epilayer was lower than that of the GaAs substrate, although strain relaxation arose due to the nucleation of misfit dislocations.File in questo prodotto:
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