The performances of radiation detectors based on semiconductor compounds are strongly affected by the incomplete charge collection of the photo-generated carriers. In order to investigate how different causes such as trapping or material inhomogeneities affect the signal formation, a technique is required which can gain access to the local charge collection properties of the detector. To this scope it has been assembled an experimental set-up able to detect charge transients induced by infrared pulses and it has been tested on a multi-strip CdTe detector. The implemented technique appears as a powerful and inexpensive tool for the characterization and optimization of single and multi-element detectors.
Investigation of charge collection properties of CdTe detectors by optical pulses
Cola A;Farella I;
2004
Abstract
The performances of radiation detectors based on semiconductor compounds are strongly affected by the incomplete charge collection of the photo-generated carriers. In order to investigate how different causes such as trapping or material inhomogeneities affect the signal formation, a technique is required which can gain access to the local charge collection properties of the detector. To this scope it has been assembled an experimental set-up able to detect charge transients induced by infrared pulses and it has been tested on a multi-strip CdTe detector. The implemented technique appears as a powerful and inexpensive tool for the characterization and optimization of single and multi-element detectors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
