Scanning electron microscopy is capable to provide chemical information on specimens interesting for the field of materials science and nanotechnology. The spatial resolution and the chemical information provided by incoherent imaging and detection of transmitted, forward-scattered electrons can reveal useful information about the specimen composition and microstructure. This paper discusses the capability and potential of low-voltage Scanning Transmission Electron Microscopy (STEM) for the characterization of multilayered structures and dopant profiles in crystalline materials.
Investigation of dopant profiles in nanosized materials by scanning transmission electron microscopy
P G Merli;V Morandi;A Migliori;C Baratto;A Ponzoni;
2004
Abstract
Scanning electron microscopy is capable to provide chemical information on specimens interesting for the field of materials science and nanotechnology. The spatial resolution and the chemical information provided by incoherent imaging and detection of transmitted, forward-scattered electrons can reveal useful information about the specimen composition and microstructure. This paper discusses the capability and potential of low-voltage Scanning Transmission Electron Microscopy (STEM) for the characterization of multilayered structures and dopant profiles in crystalline materials.File in questo prodotto:
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