We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient.
Reliability of MOS devices with tungsten gates
Lombardo S;
2004
Abstract
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient.File in questo prodotto:
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