Measurements of the microwave Hall mobility of semiconductors have been performed by an improved contactless method at 20 GHz by using a bimodal cavity resonator and a two-channel vector network analyzer. Data analysis was performed by using generalized expressions for the mobility, taking into account the actual experimental conditions. Hall microwave and dc measurements of several samples have been compared, confirming the reliability of the proposed method; the characterization of bulk n-ZnSe and modulation doped n-Al0.33Ga067As/GaAs two-dimensional electron gas samples is presented in detail. The method appears particularly suitable for the experimental determination of magnetotransport properties of semiconductor materials, especially when good electric contacts are difficult to be realized
Improved microwave Hall effect measurement method
Martinelli M;Annino G
2003
Abstract
Measurements of the microwave Hall mobility of semiconductors have been performed by an improved contactless method at 20 GHz by using a bimodal cavity resonator and a two-channel vector network analyzer. Data analysis was performed by using generalized expressions for the mobility, taking into account the actual experimental conditions. Hall microwave and dc measurements of several samples have been compared, confirming the reliability of the proposed method; the characterization of bulk n-ZnSe and modulation doped n-Al0.33Ga067As/GaAs two-dimensional electron gas samples is presented in detail. The method appears particularly suitable for the experimental determination of magnetotransport properties of semiconductor materials, especially when good electric contacts are difficult to be realizedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
