Silicon nanowires (Si-NWs) are promising for different fields of science such as sensing applications and nano-electronics. The possibility of having strong light emission from these nanostructures can open new scenario in optoelectronics, in telecommunication engineering and also in the possible integration with commercial silicon based electronics. The homogeneous doping along the NWs represents a key milestone for a variety of electronic and optoelectronic devices. In this work we present the evidence of deep infra-red emission of boron doped Si-NWs at room temperature studied by cathodoluminescence spectroscopy. A throughout correlation with structural characterization is carried out in order to identify the origin of this strong emission.
Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires
Fabbri F;Lazzarini L;Salviati G;
2010
Abstract
Silicon nanowires (Si-NWs) are promising for different fields of science such as sensing applications and nano-electronics. The possibility of having strong light emission from these nanostructures can open new scenario in optoelectronics, in telecommunication engineering and also in the possible integration with commercial silicon based electronics. The homogeneous doping along the NWs represents a key milestone for a variety of electronic and optoelectronic devices. In this work we present the evidence of deep infra-red emission of boron doped Si-NWs at room temperature studied by cathodoluminescence spectroscopy. A throughout correlation with structural characterization is carried out in order to identify the origin of this strong emission.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
