We have studied the influence of defects on silicon heterojunction solar cell efficiency by a method based on the comparison of electroluminescence (EL) image data with a finite element circuit model of solar cell efficiency. For this purpose, a general curve that relates the solar cell efficiency to a parameter representative of the defect strength, i.e., the loss of VOC, ?VOC, from EL maps is obtained, and it is shown that the efficiency can be predicted with a good degree of confidence.
Influence of defects on silicon heterojunction solar cell efficiency: Physical model and comparison with data
Lombardo S
2021
Abstract
We have studied the influence of defects on silicon heterojunction solar cell efficiency by a method based on the comparison of electroluminescence (EL) image data with a finite element circuit model of solar cell efficiency. For this purpose, a general curve that relates the solar cell efficiency to a parameter representative of the defect strength, i.e., the loss of VOC, ?VOC, from EL maps is obtained, and it is shown that the efficiency can be predicted with a good degree of confidence.File in questo prodotto:
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