In this paper a procedure for RF characterization of Carbon NanoTube Field Effect Transistors is illustrated and applied to a back-gate CNTFET. S parameters measurements up to 12 GHz are performed and a new lumped element active two-port network is proposed and deduced from these measurements. To obtain the intrinsic RF behavior of the device, we perform a straightforward static de-embedding procedure, applicable to any other CNTFET structures. In this way it is possible to evaluate the intrinsic model to implement directly in simulation software for electronic circuits CAD.
An active CNTFET model for RF characterization deduced from S parameters measurements
Marani R;
2015
Abstract
In this paper a procedure for RF characterization of Carbon NanoTube Field Effect Transistors is illustrated and applied to a back-gate CNTFET. S parameters measurements up to 12 GHz are performed and a new lumped element active two-port network is proposed and deduced from these measurements. To obtain the intrinsic RF behavior of the device, we perform a straightforward static de-embedding procedure, applicable to any other CNTFET structures. In this way it is possible to evaluate the intrinsic model to implement directly in simulation software for electronic circuits CAD.File in questo prodotto:
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