A high-stability and excellent spectral purity 72-GHz Gunn oscillator was realized to characterize ultra-wide-band Schottky diodes based on intrinsic InP InSb semiconductors. The developed microwave oscillator shows a relative frequency stability of 2x 10-9 for observation times of 1 s and a collapse frequency of 4THz. Preliminary frequency measurements of different emission lines of a far infrared laser demonstrate good detection efficiency with a typical bandwidth of a 1 THz for these novel optical receivers.
High-stability 72 GHz Gunn oscillator for the characterization of ultra-high-speed optical receivers based on InP and InSb Shottky diodes
Moretti A;
2003
Abstract
A high-stability and excellent spectral purity 72-GHz Gunn oscillator was realized to characterize ultra-wide-band Schottky diodes based on intrinsic InP InSb semiconductors. The developed microwave oscillator shows a relative frequency stability of 2x 10-9 for observation times of 1 s and a collapse frequency of 4THz. Preliminary frequency measurements of different emission lines of a far infrared laser demonstrate good detection efficiency with a typical bandwidth of a 1 THz for these novel optical receivers.File in questo prodotto:
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