Titanium dioxide (TiO2) is a wide gap semiconductor suitable for many applications. In this work, TiO2 nanostructured thin films are deposited by a plasma assisted supersonic deposition technique on silicon and on conductive glass substrates. Optical Emission Spectroscopy (OES) is used to monitor plasma conditions and precursor dissociation reactions. The influence of deposition parameters on TiO2 structure, uniformity, grain size, and optical properties are investigated by atomic force microscopy (AFM), mechanical profilometer, scanning electron microscopy (SEM) and spectroscopic ellipsometry (SE). Experimental results show how employed technique allows obtaining uniform films, with a tunable deposition range. Grains size could be chosen varying precursor flux during the deposition process. Films nanostructure and porosity result to be affected by grains size. Substrate roughness results to affect film morphology. (C) 2017 Published by Elsevier B.V.
Growth and properties of nanostructured titanium dioxide deposited by supersonic plasma jet deposition
Morandi V;
2017
Abstract
Titanium dioxide (TiO2) is a wide gap semiconductor suitable for many applications. In this work, TiO2 nanostructured thin films are deposited by a plasma assisted supersonic deposition technique on silicon and on conductive glass substrates. Optical Emission Spectroscopy (OES) is used to monitor plasma conditions and precursor dissociation reactions. The influence of deposition parameters on TiO2 structure, uniformity, grain size, and optical properties are investigated by atomic force microscopy (AFM), mechanical profilometer, scanning electron microscopy (SEM) and spectroscopic ellipsometry (SE). Experimental results show how employed technique allows obtaining uniform films, with a tunable deposition range. Grains size could be chosen varying precursor flux during the deposition process. Films nanostructure and porosity result to be affected by grains size. Substrate roughness results to affect film morphology. (C) 2017 Published by Elsevier B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.