Over the past decades, information technology had an enormous and a continuously increasing impact in our daily life and society. This has been made possible by the aggressive scaling of the metal oxide semiconductor field effect transistors (MOSFETs), i.e., the building block of microelectronic (and, now, nanoelectronic) integrated circuits, following the well known Moore's law (ITRS, 2013). The driving force for the continuous huge research efforts to maintain this trend over the years has been the performance and the economic outcomes deriving from device miniaturization.
Ion Implantation Defects and Shallow Junctions in Si and Ge
Napolitani Enrico;Impellizzeri Giuliana
2015
Abstract
Over the past decades, information technology had an enormous and a continuously increasing impact in our daily life and society. This has been made possible by the aggressive scaling of the metal oxide semiconductor field effect transistors (MOSFETs), i.e., the building block of microelectronic (and, now, nanoelectronic) integrated circuits, following the well known Moore's law (ITRS, 2013). The driving force for the continuous huge research efforts to maintain this trend over the years has been the performance and the economic outcomes deriving from device miniaturization.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
