Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants. Published by AIP Publishing.
Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium
Milazzo R;Impellizzeri G;Fortunato G;Napolitani E
2016
Abstract
Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants. Published by AIP Publishing.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
