We demonstrate the presence of small Jahn-Teller distortions for interstitial titanium in silicon at different charge states by performing ground state DFT calculations. We prove the existence of three charged transition levels within the band gap by using a non-empirical parameter-free approach, based on the GW approximation, in agreement with DLTS measurements.
Electronic and structural properties of interstitial titanium in crystalline silicon from first-principles simulations
2019
Abstract
We demonstrate the presence of small Jahn-Teller distortions for interstitial titanium in silicon at different charge states by performing ground state DFT calculations. We prove the existence of three charged transition levels within the band gap by using a non-empirical parameter-free approach, based on the GW approximation, in agreement with DLTS measurements.File in questo prodotto:
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