The doubly excited singlet states of He below the N=2 threshold may decay by autoionization or fluorescence. In the fluorescence decay channel, most decay cascades consist of emission of three photons, of which the first is a VUV photon, the second is in or near the visible range, and the last is another VUV photon. We have studied the fluorescence channel decay dynamics of the 2,0n, 2,1n and 2,-1n 1P, n=3-7, states by wavelength dispersed photon-induced fluorescence spectroscopy. We have detected the photons in the second step of the cascade and determined the branching ratios for the strongest lines in this step. From these data we are able to calculate the branching ratios of the first step in the cascade. The results are in good agreement with calculations of the main decay channels of the higher resonances, but about 20-30 % lower, and so we are able to describe quantitatively the whole fluorescence cascade of the above-mentioned doubly excited states.

Branching ratios in the radiative decay of helium doubly excited states

M Coreno;M de Simone;
2005

Abstract

The doubly excited singlet states of He below the N=2 threshold may decay by autoionization or fluorescence. In the fluorescence decay channel, most decay cascades consist of emission of three photons, of which the first is a VUV photon, the second is in or near the visible range, and the last is another VUV photon. We have studied the fluorescence channel decay dynamics of the 2,0n, 2,1n and 2,-1n 1P, n=3-7, states by wavelength dispersed photon-induced fluorescence spectroscopy. We have detected the photons in the second step of the cascade and determined the branching ratios for the strongest lines in this step. From these data we are able to calculate the branching ratios of the first step in the cascade. The results are in good agreement with calculations of the main decay channels of the higher resonances, but about 20-30 % lower, and so we are able to describe quantitatively the whole fluorescence cascade of the above-mentioned doubly excited states.
2005
Istituto di Nanotecnologia - NANOTEC
INFM
Istituto Officina dei Materiali - IOM -
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/429748
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