The heteroepitaxy of GaN directly grown directly on Si-face 4H-SiC(0 0 0 1) by molecular beam epitaxy is explored and characterized using in situ spectroscopic ellipsometry. Critical steps of the process, including SiC substrate cleaning, substrate termination through nitridation, GaN nucleation and growth, are monitored in real time. Some key relationships between growth mode, as observed by ellipsometry, and material properties are given. (c) 2005 Elsevier B.V. All rights reserved.
Nucleation and Growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry
MLosurdo;G Bruno;
2005
Abstract
The heteroepitaxy of GaN directly grown directly on Si-face 4H-SiC(0 0 0 1) by molecular beam epitaxy is explored and characterized using in situ spectroscopic ellipsometry. Critical steps of the process, including SiC substrate cleaning, substrate termination through nitridation, GaN nucleation and growth, are monitored in real time. Some key relationships between growth mode, as observed by ellipsometry, and material properties are given. (c) 2005 Elsevier B.V. All rights reserved.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
