We present a home-built high-vacuum system for performing organic semiconductor thin-film growth and its electrical characterization during deposition (real-time) or after deposition (in situ). Since the environment conditions remain unchanged during the deposition and electrical characterization process, a direct correlation between growth mode and electrical properties of thin film can be obtained. Deposition rate and substrate temperature can be systematically set in the range 0.1-10 ML/min and RT-150 oC, respectively. The sample-holder configuration allows the simultaneous electrical monitoring of up to five organic thin-film transistors (OTFTs). The OTFTs parameters such as charge carrier mobility ?, threshold voltage VTH, and the on-off ratio Ion/Ioff are studied as a function of the semiconductor thickness, with a submonolayer accuracy. Design, operation, and performance of the setup are detailed. As an example, the in situ and real-time electrical characterization of pentacene TFTs is reported.
A high-vacuum deposition system for in situ and real-time electrical characterization of organic thin-film transistors
SD Quiroga;C Albonetti;M Murgia;P Stoliar;F Borgatti;F Biscarini
2011
Abstract
We present a home-built high-vacuum system for performing organic semiconductor thin-film growth and its electrical characterization during deposition (real-time) or after deposition (in situ). Since the environment conditions remain unchanged during the deposition and electrical characterization process, a direct correlation between growth mode and electrical properties of thin film can be obtained. Deposition rate and substrate temperature can be systematically set in the range 0.1-10 ML/min and RT-150 oC, respectively. The sample-holder configuration allows the simultaneous electrical monitoring of up to five organic thin-film transistors (OTFTs). The OTFTs parameters such as charge carrier mobility ?, threshold voltage VTH, and the on-off ratio Ion/Ioff are studied as a function of the semiconductor thickness, with a submonolayer accuracy. Design, operation, and performance of the setup are detailed. As an example, the in situ and real-time electrical characterization of pentacene TFTs is reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.