Tungsten coatings were deposited on silicon substrates by radio frequency (rf) magnetron sputtering from a metallic target in Ar atmosphere. The process parameters during the sputtering process were evaluated by a Langmuir probe, particularly, the electron density and electron temperature were measured by changing the rf power and gas pressure. The morphological and structural properties of the coatings were studied as a function of the pressure. Significant correlations were found between process parameters and characteristics properties of W coatings. The influence of deposition parameters on electrical properties was investigated. The electrical resistivity of the coatings was increased from 1.3 × 10-6 to 3 × 10-5 ? m as the pressure increased as well.
Study of process parameters and characteristics properties of W coatings deposited by rf plasma sputtering
Vassallo E;Pedroni M;Aloisio M;Minelli D;Nardone A;Pietralunga SM;
2023
Abstract
Tungsten coatings were deposited on silicon substrates by radio frequency (rf) magnetron sputtering from a metallic target in Ar atmosphere. The process parameters during the sputtering process were evaluated by a Langmuir probe, particularly, the electron density and electron temperature were measured by changing the rf power and gas pressure. The morphological and structural properties of the coatings were studied as a function of the pressure. Significant correlations were found between process parameters and characteristics properties of W coatings. The influence of deposition parameters on electrical properties was investigated. The electrical resistivity of the coatings was increased from 1.3 × 10-6 to 3 × 10-5 ? m as the pressure increased as well.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
