Atomic force microscopy was used for the fabrication of submicron-scale SrTiO3-? devices. As compared to the as-grown films, the modified regions show different electrical and structural properties which can be used to develop submicrometer circuits. A 400 nm wide sidegate field gate effect transistor was reported which has a resistance modulation of 4% with gate electric fields of 1MV/cm.
Fabrication of submicron-scale srtio3- devices by an atomic force microscope
Pellegrino L;Pallecchi I;Bellingeri E;
2002
Abstract
Atomic force microscopy was used for the fabrication of submicron-scale SrTiO3-? devices. As compared to the as-grown films, the modified regions show different electrical and structural properties which can be used to develop submicrometer circuits. A 400 nm wide sidegate field gate effect transistor was reported which has a resistance modulation of 4% with gate electric fields of 1MV/cm.File in questo prodotto:
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