A simulation tool has been developed to engineer the damage formation in Lithium Niobate by ion irradiation with any atomic number and energy Both nuclear and electronic processes were considered and in particular the dependence on the ion velocity of the electronic excitation damage efficiency has been taken into account By using this tool It is possible both to draw damage nomograms useful to qualitatively foresee the result of a given process and to perform reliable simulations of the defect depth profiles as demonstrated by the good agreement with the experimental data available in the literature.

Simulation of damage induced by ion implantation in Lithium Niobate

Bianconi M;Bentini GG;
2010

Abstract

A simulation tool has been developed to engineer the damage formation in Lithium Niobate by ion irradiation with any atomic number and energy Both nuclear and electronic processes were considered and in particular the dependence on the ion velocity of the electronic excitation damage efficiency has been taken into account By using this tool It is possible both to draw damage nomograms useful to qualitatively foresee the result of a given process and to perform reliable simulations of the defect depth profiles as demonstrated by the good agreement with the experimental data available in the literature.
2010
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/436399
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