A fast and cheap nanofabrication process for a titania (TiO2) nanostructured nanowire array with a lateral section ranging from 90 to 180 nm and 1.4 mm in length is presented. As an alternative to typical pattern transfer techniques for submicron fabrication, this work focused on a standard 365 nm ultraviolet (UV) photolithographic process that is able to fabricate sol-gel nanostructured titania nanowires from a solid thin film onto a silicon oxide mesa. Useful process parameters like anisotropy and bias have been calculated. Finally, in order to carry out electrical characterization, the TiO2 nanowire-based array was electrically contacted by platinum electrodes and tested with EtOH pulses to validate enhanced gas sensor device performance and to verify electrical conductivity of these nanostructures.

Top-down contact lithography fabrication of a TiO2 nanowire array over a SiO2 mesa

Francioso L;Siciliano P
2006

Abstract

A fast and cheap nanofabrication process for a titania (TiO2) nanostructured nanowire array with a lateral section ranging from 90 to 180 nm and 1.4 mm in length is presented. As an alternative to typical pattern transfer techniques for submicron fabrication, this work focused on a standard 365 nm ultraviolet (UV) photolithographic process that is able to fabricate sol-gel nanostructured titania nanowires from a solid thin film onto a silicon oxide mesa. Useful process parameters like anisotropy and bias have been calculated. Finally, in order to carry out electrical characterization, the TiO2 nanowire-based array was electrically contacted by platinum electrodes and tested with EtOH pulses to validate enhanced gas sensor device performance and to verify electrical conductivity of these nanostructures.
2006
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/438289
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