We present a cross-section scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and ab initio density-functional theory simulations study of the cleaved nonpolar (1100) surface (m-plane) of n-type HVPE GaN free-standing quasisubstrates. Atomically resolved empty and filled states STM topographies show that no reconstruction occurs upon cleavage, as predicted by theory. STS measurements on clean and atomically flat cleaved surfaces (defect concentration sigmad=3×1013 cm−2, the Fermi energy is pinned inside the band gap in defect-derived surface states and tunneling through filled (empty) N-like (Ga-like) states takes place.
Atomic and electronic structure of the nonpolar GaN(11-00) surface
2009
Abstract
We present a cross-section scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and ab initio density-functional theory simulations study of the cleaved nonpolar (1100) surface (m-plane) of n-type HVPE GaN free-standing quasisubstrates. Atomically resolved empty and filled states STM topographies show that no reconstruction occurs upon cleavage, as predicted by theory. STS measurements on clean and atomically flat cleaved surfaces (defect concentration sigmad=3×1013 cm−2, the Fermi energy is pinned inside the band gap in defect-derived surface states and tunneling through filled (empty) N-like (Ga-like) states takes place.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
