The discovery of graphene and its fascinating capabilities has triggered an unprecedented interest in inorganic two-dimensional (2D) materials. van der Waals layered materials such as graphene, hexagonal boron nitride, transition metal dichalcogenides, and the more recently re-discovered black phosphorus (BP) indeed display an exceptional technological potential for engineering nano-electronic and nano-photonic devices and components "by design,"offering a unique platform for developing new devices with a variety of "ad hoc"properties. In this Perspective article, we provide a vision on the key transformative applications of 2D nanomaterials for the development of nanoelectronic, nanophotonic, optical, and plasmonic devices at terahertz frequencies, highlighting how the rich physical phenomena enabled by their unique band structure engineering can allow them to boost the vibrant field of quantum science and quantum technologies.

Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies

Viti L;Vitiello MS
2021

Abstract

The discovery of graphene and its fascinating capabilities has triggered an unprecedented interest in inorganic two-dimensional (2D) materials. van der Waals layered materials such as graphene, hexagonal boron nitride, transition metal dichalcogenides, and the more recently re-discovered black phosphorus (BP) indeed display an exceptional technological potential for engineering nano-electronic and nano-photonic devices and components "by design,"offering a unique platform for developing new devices with a variety of "ad hoc"properties. In this Perspective article, we provide a vision on the key transformative applications of 2D nanomaterials for the development of nanoelectronic, nanophotonic, optical, and plasmonic devices at terahertz frequencies, highlighting how the rich physical phenomena enabled by their unique band structure engineering can allow them to boost the vibrant field of quantum science and quantum technologies.
2021
Istituto Nanoscienze - NANO
TRANSITION-METAL DICHALCOGENIDES
FIELD-EFFECT TRANSISTORS
GRAPHENE PLASMONICS
FUNDAMENTAL LIMITS
MODULATION
GENERATION
METAMATERIAL
EXCITATION
CONDUCTIVITY
SPECTROSCOPY
File in questo prodotto:
File Dimensione Formato  
170903_1_5.0065595.pdf

solo utenti autorizzati

Tipologia: Versione Editoriale (PDF)
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 3.56 MB
Formato Adobe PDF
3.56 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
2204.02862v1.pdf

accesso aperto

Tipologia: Documento in Pre-print
Licenza: Altro tipo di licenza
Dimensione 1.08 MB
Formato Adobe PDF
1.08 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/438909
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 12
  • ???jsp.display-item.citation.isi??? ND
social impact