Thin films based on scandium oxide (ScO) were deposited on silicon substrates to investigate the thickness effect on the reduction of work function. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), energy dispersive X-ray reflectivity (EDXR), atomic force microscopy (AFM), and ultraviolet photoelectron spectroscopy (UPS) measurements were performed on the films deposited by electron-beam evaporation with different nominal thicknesses (in the range of 2-50 nm) and in multi-layered mixed structures with barium fluoride (BaF) films. The obtained results indicate that non-continuous films are required to minimize the work function (down to 2.7 eV at room temperature), thanks to the formation of surface dipole effects between crystalline islands and substrates, even if the stoichiometry is far from the ideal one (Sc/O = 0.38). Finally, the presence of BaF in multi-layered films is not beneficial for a further reduction in the work function.

Multi-Technique Approach for Work Function Exploration of Sc2O3 Thin Films

Mezzi A;Bolli E;Kaciulis S;Bellucci A;Paci B;Generosi A;Mastellone M;Serpente V;Trucchi DM
2023

Abstract

Thin films based on scandium oxide (ScO) were deposited on silicon substrates to investigate the thickness effect on the reduction of work function. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), energy dispersive X-ray reflectivity (EDXR), atomic force microscopy (AFM), and ultraviolet photoelectron spectroscopy (UPS) measurements were performed on the films deposited by electron-beam evaporation with different nominal thicknesses (in the range of 2-50 nm) and in multi-layered mixed structures with barium fluoride (BaF) films. The obtained results indicate that non-continuous films are required to minimize the work function (down to 2.7 eV at room temperature), thanks to the formation of surface dipole effects between crystalline islands and substrates, even if the stoichiometry is far from the ideal one (Sc/O = 0.38). Finally, the presence of BaF in multi-layered films is not beneficial for a further reduction in the work function.
2023
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
scandium oxide
work function
XPS
UPS
AFM
XRD
EDXR
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/439198
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