Pulsed laser deposition operated by an ultra-short laser beam was used to grow in a vacuum and at room temperature natively nanostructured thin films of lead telluride (PbTe) for thermoelectric applications. Different percentages of silver (Ag), from 0.5 to 20% of nominal concentration, were added to PbTe deposited on polished technical alumina substrates using a multi-target system. The surface morphology and chemical composition were analyzed by Scanning Electron Microscope and X-ray Photoelectron Spectroscopy, whereas the structural characteristics were investigated by X-ray Diffraction. Electrical resistivity as a function of the sample temperature was measured by the four-point probe method by highlighting a typical semiconducting behavior, apart from the sample with the maximum Ag concentration acting as a degenerate semiconductor, whereas the Seebeck coefficient measurements indicate n-type doping for all the samples. The power factor values (up to 14.9 µW cm K at 540 K for the nominal 10% Ag concentration sample) are competitive for low-power applications on flexible substrates, also presuming the achievement of a large reduction in the thermal conductivity thanks to the native nanostructuring.
Nanostructured Thermoelectric PbTe Thin Films with Ag Addition Deposited by Femtosecond Pulsed Laser Ablation
Bellucci A;Orlando S;Medici L;Lettino A;Mezzi A;Kaciulis S;Trucchi DM
2023
Abstract
Pulsed laser deposition operated by an ultra-short laser beam was used to grow in a vacuum and at room temperature natively nanostructured thin films of lead telluride (PbTe) for thermoelectric applications. Different percentages of silver (Ag), from 0.5 to 20% of nominal concentration, were added to PbTe deposited on polished technical alumina substrates using a multi-target system. The surface morphology and chemical composition were analyzed by Scanning Electron Microscope and X-ray Photoelectron Spectroscopy, whereas the structural characteristics were investigated by X-ray Diffraction. Electrical resistivity as a function of the sample temperature was measured by the four-point probe method by highlighting a typical semiconducting behavior, apart from the sample with the maximum Ag concentration acting as a degenerate semiconductor, whereas the Seebeck coefficient measurements indicate n-type doping for all the samples. The power factor values (up to 14.9 µW cm K at 540 K for the nominal 10% Ag concentration sample) are competitive for low-power applications on flexible substrates, also presuming the achievement of a large reduction in the thermal conductivity thanks to the native nanostructuring.File | Dimensione | Formato | |
---|---|---|---|
prod_481281-doc_197855.pdf
accesso aperto
Descrizione: Nanostructured Thermoelectric PbTe Thin Films with Ag Addition Deposited by Femtosecond Pulsed Laser Ablation
Tipologia:
Versione Editoriale (PDF)
Dimensione
30.63 MB
Formato
Adobe PDF
|
30.63 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.