Carbon nitride thin films with different nitrogen concentration have been deposited at different N2 andN2/Ar mixed partial pressures. Time-integrated optical emission spectroscopy measurements have been performed to gather information on the nature of the chemical species present in the plasma. Both the CN and C2 molecular species have been observed. Fast photography imaging of the expanding plume revealed the change of the dynamics from a free expansion at low pressure to a shock wave formation followed then by the plume stopping upon increasing the gas pressure values. Raman and XPSspectroscopy measurements performed on the deposited thin films revealed that the films, structure strongly depends on the dynamics of the expansion plasma regime rather than on the partial pressure at which the deposition takes place.

Gas pressure effects on the structure of CNx thin films deposited by laser ablation

Trusso S;Fazio B
2005

Abstract

Carbon nitride thin films with different nitrogen concentration have been deposited at different N2 andN2/Ar mixed partial pressures. Time-integrated optical emission spectroscopy measurements have been performed to gather information on the nature of the chemical species present in the plasma. Both the CN and C2 molecular species have been observed. Fast photography imaging of the expanding plume revealed the change of the dynamics from a free expansion at low pressure to a shock wave formation followed then by the plume stopping upon increasing the gas pressure values. Raman and XPSspectroscopy measurements performed on the deposited thin films revealed that the films, structure strongly depends on the dynamics of the expansion plasma regime rather than on the partial pressure at which the deposition takes place.
2005
Istituto per i Processi Chimico-Fisici - IPCF
CNx films
Laser ablation
Film deposition
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/440358
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