>= 50% directly deposited on the GaAs substrate is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 mu m telecom O-band with fine structure splitting as low as 16 mu eV, thus making them suitable as photon sources in quantum communication networks using entangled photons.
We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed on the quantum dot from the surface, allows a fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100nm InAlAs metamorphic layer with In content
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
Fedorov A;
2021
Abstract
We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed on the quantum dot from the surface, allows a fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100nm InAlAs metamorphic layer with In contentI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
