Chip-Scalable, Room-Temperature, Zero-Bias, Graphene-Based Terahertz Detectors with Nanosecond Response Time

TWe report room temperature terahertz detection in large-area single layer graphene (SLG) grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We employ different dielectric thin layers as substrate termination (SiO 2 ,Al 2 O 3 ) and different layers as top encapsulation (HfO 2 or large-area CVD-grown hexagonal boron nitride), to investigate the effect of the surrounding layers on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ~5 ns and noise equivalent powers ~1 nWHz −1/2 are achieved under zero-bias operation.