Laser crystn. of amorphous silicon film on polymeric substrate is reported. Intrinsic amorphous films 1000 .ANG. thick were deposited on Polyethersulfone (PES) by PECVD technique at 120-200a. Dehydrogenation and crystn. of the thin films were carried out under high energy (10 J) XeCl pulsed excimer laser. The irradn. conditions were varied to study their effect on the properties of dehydrogenated and crystd. Si. Elec. and optical properties of as-deposited and crystd. Si films were studied. Structural characterization (SEM, x-ray diffraction, AFM) was performed. Av. crystallite size and grain distribution were evaluated. For the substrate, the glass transition temp. (Tg) and the coeff. of thermal expansion (CTE) were evaluated by DSC and TMA (thermo mech. anal.) measurements and the compatibility with the deposition and crystn. processes were verified
Thin silicon films on polymeric substrate
Amendola E;
2005
Abstract
Laser crystn. of amorphous silicon film on polymeric substrate is reported. Intrinsic amorphous films 1000 .ANG. thick were deposited on Polyethersulfone (PES) by PECVD technique at 120-200a. Dehydrogenation and crystn. of the thin films were carried out under high energy (10 J) XeCl pulsed excimer laser. The irradn. conditions were varied to study their effect on the properties of dehydrogenated and crystd. Si. Elec. and optical properties of as-deposited and crystd. Si films were studied. Structural characterization (SEM, x-ray diffraction, AFM) was performed. Av. crystallite size and grain distribution were evaluated. For the substrate, the glass transition temp. (Tg) and the coeff. of thermal expansion (CTE) were evaluated by DSC and TMA (thermo mech. anal.) measurements and the compatibility with the deposition and crystn. processes were verifiedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
