In this paper we present a study of the impact of technology on the CNTFET-based circuits performance. In particular we show the layout of a NOT gate, used as block to build a chain of NOT and a ring oscillator. Then we present the time domain simulations of these circuits in order to see how the parasitic elements could limit the high-speed performances of CNTFETs.

Impact of Technology on CNTFET-Based Circuits Performance

Marani R;
2020

Abstract

In this paper we present a study of the impact of technology on the CNTFET-based circuits performance. In particular we show the layout of a NOT gate, used as block to build a chain of NOT and a ring oscillator. Then we present the time domain simulations of these circuits in order to see how the parasitic elements could limit the high-speed performances of CNTFETs.
2020
Istituto di Sistemi e Tecnologie Industriali Intelligenti per il Manifatturiero Avanzato - STIIMA (ex ITIA)
Inglese
9
http://www.scopus.com/record/display.url?eid=2-s2.0-85085842743&origin=inward
Sì, ma tipo non specificato
Time domain analysis
Time-domain simulations
Parasitic element
2
info:eu-repo/semantics/article
262
Marani, R; Perri, Ag
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/446109
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