In this paper we present a study of the effects of parasitic elements of interconnection lines in integrated circuits (I.C.) where Carbon NanoTubes (CNTs) are embedded. In particular the Drain/Source pads dimensions of CNT are analyzed, as well as the interconnection lines between a CNT and an appropriate load are sized.Furthermore the time domain and frequency simulations of some circuits are presented in order to see how the parasitic elements could limit the high-speed performances of CNTs.

Editors' choice-Effects of parasitic elements of interconnection lines in CNT embedded integrated circuits

Marani R;
2020

Abstract

In this paper we present a study of the effects of parasitic elements of interconnection lines in integrated circuits (I.C.) where Carbon NanoTubes (CNTs) are embedded. In particular the Drain/Source pads dimensions of CNT are analyzed, as well as the interconnection lines between a CNT and an appropriate load are sized.Furthermore the time domain and frequency simulations of some circuits are presented in order to see how the parasitic elements could limit the high-speed performances of CNTs.
2020
Istituto di Sistemi e Tecnologie Industriali Intelligenti per il Manifatturiero Avanzato - STIIMA (ex ITIA)
Carbon nanotubes
Frequency domain analysis
High-speed performance
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/446113
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