In this paper we present a study of the effects of parasitic elements of interconnection lines in integrated circuits (I.C.) where Carbon NanoTubes (CNTs) are embedded. In particular the Drain/Source pads dimensions of CNT are analyzed, as well as the interconnection lines between a CNT and an appropriate load are sized.Furthermore the time domain and frequency simulations of some circuits are presented in order to see how the parasitic elements could limit the high-speed performances of CNTs.

Editors' choice-Effects of parasitic elements of interconnection lines in CNT embedded integrated circuits

Marani R;
2020

Abstract

In this paper we present a study of the effects of parasitic elements of interconnection lines in integrated circuits (I.C.) where Carbon NanoTubes (CNTs) are embedded. In particular the Drain/Source pads dimensions of CNT are analyzed, as well as the interconnection lines between a CNT and an appropriate load are sized.Furthermore the time domain and frequency simulations of some circuits are presented in order to see how the parasitic elements could limit the high-speed performances of CNTs.
2020
Istituto di Sistemi e Tecnologie Industriali Intelligenti per il Manifatturiero Avanzato - STIIMA (ex ITIA)
Inglese
9
http://www.scopus.com/record/display.url?eid=2-s2.0-85079794887&origin=inward
Carbon nanotubes
Frequency domain analysis
High-speed performance
2
info:eu-repo/semantics/article
262
Marani, R; Perri, Ag
01 Contributo su Rivista::01.01 Articolo in rivista
none
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/446113
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 30
  • ???jsp.display-item.citation.isi??? ND
social impact