In this paper we show how to improve the performance of electronic circuits, through a comparative study between analogue circuits based on CNTFET and the conventionally ones based on MOSFET in 32 nm technology. In particular we design and compare an amplifier in source and drain common configuration and a self-biased cascode current mirror, highlighting that the procedure can be easily applied to a current mirror and a cascode current mirror. We show how the use of CNTFETs improves the performance of all proposed circuits with regards to the pass band, gain and output resistance. The simulation results, carried out with the simulator Advanced Design System, allow us to define quantitatively the differences between CNTFET and MOS technology and the advantages of the first for analogue VLSI circuits.
Techniques to improve the performance in the CNTFET-based analogue circuit design
Marani R;
2020
Abstract
In this paper we show how to improve the performance of electronic circuits, through a comparative study between analogue circuits based on CNTFET and the conventionally ones based on MOSFET in 32 nm technology. In particular we design and compare an amplifier in source and drain common configuration and a self-biased cascode current mirror, highlighting that the procedure can be easily applied to a current mirror and a cascode current mirror. We show how the use of CNTFETs improves the performance of all proposed circuits with regards to the pass band, gain and output resistance. The simulation results, carried out with the simulator Advanced Design System, allow us to define quantitatively the differences between CNTFET and MOS technology and the advantages of the first for analogue VLSI circuits.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
