In this paper we analyze an application of CNTFET in the design of NOT gate, in which parasitic elements of interconnection lines are considered. At first we study the time domain analysis of NOT gate without to consider the parasitic elements of interconnection lines, in order to compare the obtained results with those in which the parasitic elements are considered, showing how they limit the high-speed performances of CNTs.

A Procedure to Analyze a CNTFET-Based NOT Gate with Parasitic Elements of Interconnection Lines

Marani R;
2021

Abstract

In this paper we analyze an application of CNTFET in the design of NOT gate, in which parasitic elements of interconnection lines are considered. At first we study the time domain analysis of NOT gate without to consider the parasitic elements of interconnection lines, in order to compare the obtained results with those in which the parasitic elements are considered, showing how they limit the high-speed performances of CNTs.
2021
Istituto di Sistemi e Tecnologie Industriali Intelligenti per il Manifatturiero Avanzato - STIIMA (ex ITIA)
CNTs
CNTFET
Modelling
NOT gate
Integrated circuit interconnections
VLSI
ADS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/446121
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