We present a aimulation study of noise behavior in basic current mirror using CNTFET and MOSFET, obtaining that the output noise current is always higher for the CNTFET than for the MOS device.
A simulation study of noise behavior in basic current mirror using CNTFET and MOSFET
Marani R;
2021
Abstract
We present a aimulation study of noise behavior in basic current mirror using CNTFET and MOSFET, obtaining that the output noise current is always higher for the CNTFET than for the MOS device.File in questo prodotto:
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