In this paper we review the issue about the modelling of Carbon NanoTube Field Effect Transistors (CNTFETs), considering also the temperature effects on I-V characteristics of device. In particular we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations, comparing our results with those obtained with a numerical model online available and obtaining output characteristics comparable but with a lower CPU calculation time.
A review on modelling of carbon nanotube field effect transistors
Marani R;
2021
Abstract
In this paper we review the issue about the modelling of Carbon NanoTube Field Effect Transistors (CNTFETs), considering also the temperature effects on I-V characteristics of device. In particular we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations, comparing our results with those obtained with a numerical model online available and obtaining output characteristics comparable but with a lower CPU calculation time.File in questo prodotto:
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